AgGeSbTe thin film as a negative heat-mode resist for dry lithography
نویسندگان
چکیده
An AgGeSbTe thin film is proposed as a negative heat-mode resist for dry lithography. It possesses high etching selectivity with the rate difference of 62 nm/min in CHF3/O2 mixed gases. The etched sidewall steep without obvious lateral corrosion. lithographic characteristics and underlying physical mechanisms are analyzed. Besides, results X-ray diffraction, Raman spectroscopy, photoelectron spectroscopy further indicate that laser irradiation causes formation Ge, Sb, AgTe crystals, which basis selectivity. In addition, Si to 19 at SF6/Ar gases, possessing good resistance. believed promising
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ژورنال
عنوان ژورنال: Chinese Optics Letters
سال: 2022
ISSN: ['1671-7694']
DOI: https://doi.org/10.3788/col202220.031601